e s j a 0 2 - 2 0 a 2 0 m a 20 kv 10 0ns high v oltage s ilicon r ectifier d iode ----------------------------------------------------------------------------------------------------------------------------- ------ - gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9 638 201 7 - 10 1 / 2 introduce : hvgt high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers . f eatures: 1. high reliability design . 2. small volume . 3. h igh frequency . 4. conform to rohs and sgs . 5. epoxy resin molded in vacuumhave anticorrosion in the surface . a pplications: 1. h igh voltage multiplier circuit 2. electrostatic generator circuit . 3. g eneral purpose high voltage rectifier. 4. negative ion generator . mechanical data: 1. case : epoxy resin molding. 2. terminal: w elding axis . 3. net weight : 0. 3 4 grams (approx) . shape display: s ize: (unit:mm) hvgt name : do - 3 1 2 maximum ratings and characteristics : ( absolute maximum ratings ) items symbols condition data v alue units repetitive peak renerse voltage v rrm t a = 2 5c 20 kv non - repetitive peak renerse voltage v r s m t a = 2 5c -- kv average forward current maximum i favm t a = 4 0 c 2 0 m a t oil = 5 5c -- m a non - repetitive forward surge current i fsm t a =25c ; 5 0 hz h alf - s ine w ave ; 8.3 ms 1 .0 a junction temperature t j 1 2 5 c allowable operation case temperature tc - 40~+ 1 2 5 c storage temperature t stg - 40 ~ + 1 2 5 c electrical characteristics: t a =25c ( unless o therwise s pecified ) items symbols condition data value units maximum forward voltage drop v f m at 25c ; at i favm 4 5 v maximum reverse current i r1 at 25c ; at v rrm 2.0 ua i r2 at 1 00 c ; at v rrm 2 0 ua maximum reverse recovery time t rr a t 25c ; i f = 0.5i r ; i r = i favm ; i rr = 0. 25 i r 100 ns junction capacitance c j at 25c ; v r =0v ; f=1mhz 1.0 pf
e s j a 0 2 - 2 0 a 2 0 m a 20 kv 10 0ns high v oltage s ilicon r ectifier d iode ----------------------------------------------------------------------------------------------------------------------------- ------ - gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9 638 201 7 - 10 2 / 2 fig 1 fig 2 forward current derating curve reverse recovery measurement waveform typical data capture points: i f =0.5i r , i r ,i rr =0.25i r i r is typically the rated average forward current maximum (i favm ) of the d.u.t fig 3 non - repetitive surge current cycles ( 5 0hz) marking type code cathode mark e s j a 0 2 - 2 0 a
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